DE475-501N44A

Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-501N44A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency VDSS ID25 RDS(on) Maximum Ratings 500 500 ±20 ±30 44 264 44 30 5 >200 600 4.5 -55…+150 150 -55…+150 V V V V A A A mJ V/ns V/ns W W °C °C °C °C g Features SG1 SG2 GATE = = = = 500 V 44 A 0.14 Ω 600W Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB TJ TJM Tstg TL Weight Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C PDHS DRAIN SD1 SD2 1.6mm (0.063 in) from case for 10 s 300 3 Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power − − cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Low gate charge and capacitances Test Conditions Characteristic Values TJ = 25°C unless otherwise specified min. VDSS VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C TJ = 125°C VGS = 0 VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 15 V, ID = 0.5ID25, p...