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EMF22 Dataheets PDF



Part Number EMF22
Manufacturers Rohm
Logo Rohm
Description Power management
Datasheet EMF22 DatasheetEMF22 Datasheet (PDF)

EMF22 / UMF22N Transistors Power management (dual transistors) EMF22 / UMF22N 2SC5585 and DTC114E are housed independently in a EMT6 or UMT6 package. zExternal dimensions (Units : mm) zApplication Power management circuit EMF22 0.22 (4) (5) (6) (3) (2) zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. ROHM : EMT6 1.2 1.6 (1) 0.13 Each lead has same dimensions Abbreviated symbol : F22 (4) zStructure Silicon epitaxial planar transistor.

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EMF22 / UMF22N Transistors Power management (dual transistors) EMF22 / UMF22N 2SC5585 and DTC114E are housed independently in a EMT6 or UMT6 package. zExternal dimensions (Units : mm) zApplication Power management circuit EMF22 0.22 (4) (5) (6) (3) (2) zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. ROHM : EMT6 1.2 1.6 (1) 0.13 Each lead has same dimensions Abbreviated symbol : F22 (4) zStructure Silicon epitaxial planar transistor UMF22N 0.65 1.3 0.65 0.7 0.9 (3) 0.5 0.5 0.5 1.0 1.6 0.2 (6) zEquivalent circuits (3) (2) (1) 1.25 2.1 0.15 0.1Min. DTr2 R2 (4) R1 Tr1 0 to 0.1 ROHM : UMT6 EIAJ : SC-88 (5) R1=10kΩ R2=10kΩ (6) Abbreviated symbol :F22 zPackaging specifications Type Package Marking Code Basic ordering unit(pieces) EMF22 EMT6 F22 T2R 8000 UMF22N UMT6 F22 TR 3000 (1) Each lead has same dimensions 2.0 (5) (2) 1/4 EMF22 / UMF22N Transistors zAbsolute maximum ratings (Ta=25°C) Tr1 Limits Symbol 15 VCBO VCEO 12 VEBO 6 IC 500 Collector current ICP 1.0 PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg −55~+150 Range of storage temperature Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Unit V V V mA A mW °C °C ∗1 ∗2 DTr2 Parameter Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Limits Symbol 50 VCC −10~+40 VIN 100 IC 50 IO 150(TOTAL) PC Tj 150 Tstg −55~+150 Unit V V mA mA mW °C °C ∗1 ∗2 ∗1 Characteristics of built-in transistor. ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. zElectrical characteristics (Ta=25°C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 12 15 6 − − − 270 − − Typ. − − − − − 90 − 320 7.5 Max. − − − 100 100 250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=1mA IC=10µA IE=10µA VCB=15V VEB=6V IC=200mA, IB=10mA VCE=2V, IC=10mA VCE=2V, IE=−10mA, f=100MHz VCB=10V, IE=0mA, f=1MHz DTr2 Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency ∗Transition frequency of the device Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min. − 3 − − − 30 7 0.8 − Typ. − − 0.1 − − − 10 1 250 Max. 0.5 − 0.3 0.88 0.5 − 13 1.2 − Unit V V mA µA − kΩ − MHz Conditions VCC=5V, IO=100µA VO=0.3V, IO=10mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA − − VCE=10V, IE=−5mA, f=100MHz ∗ 2/4 EMF22 / UMF22N Transistors zElectrical characteristic curves Tr1 1000 COLLECTOR CURRENT : IC (mA) VCE=2V Pulsed DC CURRENT GAIN : hFE 1000 Ta=125°C Ta=25°C Ta=−40°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) VCE=2V Pulsed 1000 Ta=25°C Pulsed 100 100 100 5°C Ta= −40° C 10 Ta=25° C Ta=12 IC/IB=50 10 10 IC/IB=20 IC/IB=10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 1 10 100 1000 1 1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 DC current gain vs. Fig.3 Collector-emitter saturation voltage collector current vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) BASER SATURATION VOLTAGE : VBE (sat) (mV) 1000 100 Ta=125°C Ta=25°C Ta=−40°C 1000 Ta=25°C Ta=−40°C TRANSITION FREQUENCY : fT (MHz) IC/IB=20 Pulsed 10000 IC/IB=20 Pulsed 1000 VCE=2V Ta=25°C Pulsed 100 Ta=125°C 10 100 10 1 1 10 100 1000 10 1 10 100 1000 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) Fig.5 Base-emitter saturation voltage Fig.6 Gain bandwidth product vs. collector current vs. emitter current EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 IE=0A f=1MHz Ta=25°C 100 Cib 10 Cob 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/4 EMF22 / UMF22N Transistors DTr2 100 50 OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) VO=0.3V 10m 5m 2m 1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Ta=100°C 25°C −40°C VCC=5V 1k 500 DC CURRENT GAIN : GI VO=5V Ta=100°C 25°C −40°C 20 10 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Ta=−40°C 25°C 100°C 200 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage.


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