IRFR110, IRFU110
Data Sheet July 1999 File Number
3275.3
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
These are N-Cha...
IRFR110, IRFU110
Data Sheet July 1999 File Number
3275.3
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect
transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced power MOSFETs are designed for use in applications such as switching
regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power. These
transistors can be operated directly from integrated circuits. Formerly developmental type TA17441.
Features
4.7A, 100V rDS(ON) = 0.540Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance 175oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER IRFU110 IRFR110 PACKAGE TO-251AA TO-252AA BRAND IFU110 IFR110
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
Packaging
JEDEC TO-251AA
SOURCE DRAIN GATE
JEDEC TO-252AA
GATE SOURCE DRAIN (FLANGE)
DRAIN (FLANGE)
4-371
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
IRFR110, IRFU110
Absolute Maximum Ratings
TC = 25oC, U...