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IRFZ40

ST Microelectronics

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI s s s s s s s V DSS 50 V 50 V ...


ST Microelectronics

IRFZ40

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Description
IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI s s s s s s s V DSS 50 V 50 V R DS( on) < 0.028 Ω < 0.028 Ω ID 50 A 27 A TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE TO-220 3 1 2 1 2 3 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS ID ID ID M( ) P tot V ISO T stg Tj Parameter IRFZ40 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (cont.) at Tc = 25 oC Drain Current (cont.) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Value IRFZ40FI 50 50 ± 20 50 35 200 150 1  -65 to 175 175 27 19 200 45 0.3 2000 50 50 Unit V V V A A A W W/ o C V o o C C () Pulse width limited by safe operating area July 1993 1/9 IRFZ40/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb R th c-s Tl Thermal Resistance Junction-case Max 1 62.5 0.5 300 ISOWATT220 3.33 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature...




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