IRFZ44E | International Rectifier

IRFZ44E | INCHANGE

N-Channel MOSFET

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFZ44E， IIRFZ44E ·FEATURES ·Static drain-s.

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFZ44E， IIRFZ44E ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤23mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VG.

IRFZ44E | International Rectifier

Power MOSFET

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PD - 91671B IRFZ44E HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Ratin.

PD - 91671B IRFZ44E HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.023Ω G S ID = 48A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized devic.

IRFZ44EL | International Rectifier

Power MOSFET

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PD - 9.1714 PRELIMINARY IRFZ44ES/L HEXFET® Power MOSFET D l l l l l l Advanced Process Technolog.

PD - 9.1714 PRELIMINARY IRFZ44ES/L HEXFET® Power MOSFET D l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 60V RDS(on) = 0.023Ω G S ID = 48A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, c.

IRFZ44ELPBF | International Rectifier

Power MOSFET

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www.DataSheet4U.com PD - 95572 IRFZ44ESPbF IRFZ44ELPbF l l l l l l l Advanced Process Technology .

www.DataSheet4U.com PD - 95572 IRFZ44ESPbF IRFZ44ELPbF l l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.023Ω G ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance p.

IRFZ44EPBF | International Rectifier

Power MOSFET

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www.DataSheet4U.com PD - 94822 IRFZ44EPbF Advanced Process Technology Dynamic dv/dt Rating 175°C O.

www.DataSheet4U.com PD - 94822 IRFZ44EPbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.023Ω G S ID = 48A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee.