TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY25N60E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTY25N60E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design ...
