Y100N10E

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY100N10E/D ™Designer's Data Sheet TMOS E-FET.™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature MTY100N10E Motorola Preferred Device TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM ® D G MAXIMUM RATINGS (TC = 25°C unle...