MP6757

TOSHIBA GTR Module Silicon N Channel IGBT MP6757 High Power Switching Applications Motor Control Applications · The electrodes are isolated from case. · 6 IGBTs are 6 free wheeling diodes are built into 1 package. · Enhancement-mode · High speed : tf = 0.35 µs (max) (IC = 25 A) : trr = 0.15 µs (max) (IF = 25 A) MP6757 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Forward current DC 1 ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― JEDEC JEITA TOSHIBA Weight: 44 g (typ.) Rating 600 ±20 25 50 25 50 72 150 −40 to 125 2500 (AC 1 minute) 1.5 Unit V V A A W °C °C V N·m ― ― 2-78A1A 1 2002-11-20 Equivalent Circuit + MP6757 GU (BU) GV (BV) GW (BW) U V W GX (BX) GY (BY) GZ (BZ) − Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Collector-emitter voltage Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VCES VGE (off) VCE (sat) Cies tr ton tf toff VF trr Rth (j-c) Test Condition VGE = ±20 V, VCE = 0 V VCE = 600 V, VGE = 0 V IC = 10 mA, VGE = 0 V VCE = 5 V, IC = 25 mA IC = 25 A, VGE = 15 V VCE = 10 V, VGE = 0 V, f = 1 MHz 15 V 0V...