MPS3906

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPS3906 PNP switching transistor Product specification Supersedes data of 1997 May 23 1999 Apr 12 Philips Semiconductors Product specification PNP switching transistor FEATURES Low current (max. 100 mA) Low voltage (max. 40 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION PNP transistor in a plastic TO-92; SOT54 package. NPN complement: MPS3904. 1 handbook, halfpage MPS3906 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 3 1 2 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector MIN. − − − − − − − −65 − −65 MAX. −40 −40 −5 −100 −200 −200 500 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C 1999 Apr 12 2 Philips Semiconductors Product specification PNP switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; ...