MPS3640

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS3640/D Switching Transistor PNP Silicon MPS3640 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –12 –12 –4.0 –80 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –100 µAdc, VBE = 0) Collector – Emitter Sustaining Voltage(1) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCE = –6.0 Vdc, VBE = 0) (VCE = –6.0 Vdc, VBE = 0, TA = 65°C) Base Current (VCE = –6.0 Vdc, VEB = 0) 1. Pulse Test: Pulse Width V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES — — IB — –0.01 –1.0 –10 nAdc –12 –12 –12 –4.0 — — — — Vdc Vdc Vdc Vdc µAdc v 300 ms, Duty Cycle v 2.0%. Motorola Small–Signal Transistors, FETs and Diodes D...