MPS3638A

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS3638A/D Switching Transistor PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MPS3638A MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD PD TJ, Tstg Value –25 –25 –25 –4.0 –500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –100 mAdc, VBE = 0) Collector – Emitter Sustaining Voltage(2) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCE = –15 Vdc, VBE = 0) (VCE = –15 Vdc, VBE = 0, TA = –65°C) Emitter Cutoff Current (VEB = –3.0 V, IC = 0) Base Current (VCE = –15 Vdc, VBE = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V...