STS5PF30L

® STS5PF30L P - CHANNEL 30V - 0.053Ω - 5A SO-8 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STS5PF 30L s s V DSS 30 V R DS(on) < 0.060 Ω ID 5 A s TYPICAL RDS(on) = 0.053 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGMENT IN CELLULAR PHONES s SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Single O peration Drain Current (continuous) at Tc = 100 o C Single O peration Drain Current (pulsed) T otal Dissipation at Tc = 25 C o o Value 30 30 ± 20 5 3 20 2.5 Un it V V V A A A W I DM ( ) P tot () Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed November 1999 1/6 STS5PF30L THERMAL DATA R thj -amb Tj Ts tg *Thermal Resistance Junction-ambient Maximum O perating Junction Temperature Storage T emperature 50 150 -55 to 150 o o C/W C/W o C (*) Mounted on FR-4 board (t ≤ 10sec) ELECTRI...