STS5N150

N-CHANNEL 150V - 0.045 Ω - 5A SO-8 LOW GATE CHARGE STripFET™ POWER MOSFET TARGET DATA TYPE STS5N150 s s s STS5N150 VDSS 150 V RDS(on) <0.06 Ω ID 5A TYPICAL RDS(on) = 0.045 Ω EXTREMELY HIGH dv/dt CAPABILITY EXTREMELY LOW GATE CHARGE DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. SO-8 APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL INTERNAL SCHEMATIC DIAGRAM Ordering Information SALES TYPE STS5N150 MARKING S5N150 PACKAGE SO-8 PACKAGING TAPE & REEL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Storage Temperature Operating Junction Temperature Value 150 150 ± 20 5 3 20 2.5 -55 to 150 Unit V V V A A A W °C () Pulse width limited by safe operating area. June 2003 This is preliminary information on a new product forseen to be developped. Details are subject to change without notice 1/6 STS5N150 THERMAL DATA Rthj-amb (*)Thermal Resistance Junction-ambient...