STS5DNF20V

N-CHANNEL 20V - 0.030 Ω - 5A SO-8 2.7V-DRIVE STripFET™ II POWER MOSFET TYPE STS5DNF20V s s s STS5DNF20V VDSS 20 V RDS(on) < 0.040 Ω ( @ 4.5 V ) < 0.045 Ω ( @ 2.7 V ) ID 5A s TYPICAL RDS(on) = 0.030 Ω @ 4.5 V TYPICAL RDS(on) = 0.037 Ω @ 2.7 V ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SO-8 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Single Operation Drain Current (continuous) at TC = 100°C Single Operation Drain Current (pulsed) Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation Value 20 20 ± 12 5 3 20 1.6 2 Unit V V V A A A W W () Pulse width limited by safe operating area. August 2002 . 1/8 STS5DNF20V THERMAL DATA Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Single Operation Thermal Resistance Junction-ambient Dual Op...