STP7NE10L

® STP7NE10L N - CHANNEL 100V - 0.3 Ω - 7A - TO-220 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STP7NE10L s s s s s V DSS 100 V R DS(on) < 0.4 Ω ID 7A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 1 3 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique " Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES,etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR VGS ID ID I DM ( ) P tot dv/dt(1 ) T st g Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 100 100 ± 20 7 4.9 28 45 0.3 6 -65 to 150 175 (1) ISD ≤7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C 1/5 () Pulse width limited by safe operating area October 1999 STP7NE10L THERMAL DATA R thj-case R thj-amb R thc-sink...