STB7NC80Z

STP7NC80Z - STP7NC80ZFP STB7NC80Z - STB7NC80Z-1 N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE STP7NC80Z STP7NC80ZFP STB7NC80Z STB7NC80Z-1 s s VDSS 800 800 800 800 V V V V RDS(on) < < < < 1.5 Ω 1.5 Ω 1.5 Ω 1.5 Ω ID 6.5 A 6.5 A 6.5 A 6.5 A TO-220 3 1 s s s TYPICAL RDS(on) = 1.3Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED D2PAK 3 1 2 TO-220FP 12 3 I2PAK (Tabless TO-220) DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s ORDERING INFORMATION SALES TYPE STP7NC80Z STP7NC80ZFP STB7NC80ZT4 STB7NC80Z-1 MARKING P7NC80Z P7NC80ZFP B7NC80Z B7NC80Z PACKAGE TO-220 TO-220FP D2PAK I2PAK PACKAGING TUBE TUBE TAPE & REEL TUBE May 2003 1/13 STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP7NC80Z STB7NC80Z STB7NC80Z-1 VDS VDGR VGS ID ID IDM ( ) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Curre...