Document
NPN Transistors
P b Lead(Pb)-Free
C945
TO-92
1. EMITTER
2. COLLECTOR 3. BASE
12 3
Junction Temperature Storage Temperature
0.4
Tj
+150
°C
TSTG -40 to + 150 °C
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C945
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol Min Typ
Max Unit
ON CHARACTERISTICS
DC Current Gain VCE=6.0V, IC=1mA VCE=6.0V, IC=0.1mA
Collector-Emitter Saturation Voltage IC=100mA, IB=10mA
Base-Emitter Voltage IC=100mA, IB=10mA
TransitionFrequence VCE = 6V, IC = 10mA, f = 30MHz
Collector Output Capacitance VCB = 10V, IE = 0, f = 1MHz
Noise figure VCE = 6V, IC = 0.1mA, Rg = 10kΩ, f = 1KMHz
hFE1 hFE2 VCE(sat) VBE(sat)
70 40 -
-
- 700 - 0.3 V - 1.0 V
fT 200 -
- MHz
Cob -
- 3.0 pF
NF - 4.0 10 dB
CLASSIFICATION OF hFE1
Rank
O
Range
70-140
Y 120-240
GR 200-400
BL 350-700
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C945
FIG1. Total Power Dissipation vs Ambient Temperature
FIG.2 Collector Current vs Collector to Emitter Voltage
FIG.3 Collector and Bade Saturation Voltage vs Collector Current
FIG.4 Gain Bandwidth Product vs Emitter Current
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H L
C945
TO-92 Outline Dimensions
E
C
J K G
unit:mm
TO-92
Dim A B C D E G H J K L
Min Max 3.30 3.70
1.10 1.40
0.38 0.55
0.36 0.51
4.40 4.70
3.43 -
4.30 4.70
1.270TYP
2.44 14.10
2.64 14.50
D B
A
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