Electrically Isolated Back Surface
HiPerFETTM MOSFET
Q2-Class
(Electrically Isolated Back Surface)
IXFR 38N80Q2
VDSS ID25 RDS(on)
= = =
800 V 28 A 240 ...
Description
HiPerFETTM MOSFET
Q2-Class
(Electrically Isolated Back Surface)
IXFR 38N80Q2
VDSS ID25 RDS(on)
= = =
800 V 28 A 240 mΩ
trr ≤ 250 ns
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS, t = 1 min ISOL = 1mA, t = 1 s Mounting Force 5 g Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 800 800 ± 30 ± 40 28 150 38 75 4.0 20 416 -55 ... +150 150 -55 ... +150 300 2500 3000 V V V V A A A mJ J V/ns Features W °C °C °C °C V~ V~
z z
ISOPLUS247 (IXFR)
G
D
Isolated Back Surface D = Drain
G = Gate S = Source
z
z z
Double metal process for low gate resistance Silicon chip on DCB substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier
Advantages
z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.0 4.5 ± 200 TJ = 25°C TJ = 125°C 50 2 V V nA µA mA
z z
Easy assembly Space savings High power density
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V
VGS = 10 V, ID = IT Pulse test, t ≤ 300 µs, duty cycle ...
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