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HY63V8400 Dataheets PDF



Part Number HY63V8400
Manufacturers Hynix Semiconductor
Logo Hynix Semiconductor
Description 512K x 8-Bit CMOS Fast SRAM
Datasheet HY63V8400 DatasheetHY63V8400 Datasheet (PDF)

HY63V8400 Series 512Kx8bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY63V8400 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8-bits. The HY63V8400 uses eight common input and output lines and has an output enable pin which operates faster than. address access time at read cycle. The device is fabricated using Hyundai's advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed .

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HY63V8400 Series 512Kx8bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY63V8400 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8-bits. The HY63V8400 uses eight common input and output lines and has an output enable pin which operates faster than. address access time at read cycle. The device is fabricated using Hyundai's advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications FEATURES • • • • Single 3.3V±0.3V Power Supply Fully static operation and Tri-state output TTL compatible inputs and outputs Low data Retention Voltage: - 2.0V(min) –L-ver. Only • Center Power/Ground Pin Configuration • Standard pin configuration - 36pin 400mil SOJ - 44pin 400mil TSOP-ll Product No. HY63V8400 HY63V8400 HY63V8400 Supply Voltage(V) 3.3 3.3 3.3 Speed (ns) 10 12 15 Operation Current(mA) 200 190 180 Standby Current(mA) L 10 10 10 1 1 1 PIN CONNECTION A0 BLOCK DIAGRAM SENSE AMP ROW DECODER I/O1 OUTPUT BUFFER I/O8 A0 A1 A2 A3 A4 /CS I/O1 I/O2 Vcc Vss I/O3 I/O4 /WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 SOJ 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 NC A18 A17 A16 A15 /OE I/O8 I/O7 Vss Vcc I/O6 I/O5 A14 A13 A12 A11 A10 NC NC NC A0 A1 A2 A3 A4 /C S I/O1 I/O2 Vcc Vss I/O3 I/O4 /W E A5 A6 A7 A8 A9 NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 5 TSOP-II 3 34 33 32 31 30 29 28 27 26 25 24 23 NC NC NC A18 A17 A16 A15 /O E I/O8 I/O7 Vss Vcc I/O6 I/O5 A14 A13 A12 A11 A10 NC NC NC ADD INPUT BUFFER DECODER MEMORY ARRAY 512x1024x8 A18 /CS /OE /WE SOJ TSOP-II PIN DESCRIPTION Pin Name /CS /WE /OE I/O1~I/O8 Pin Function Chip Select Write Enable Output Enable Data Input/Output Pin Name A0~A18 Vcc Vss NC Pin Function Address Input Power(+3.3V) Ground No Connection This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.02 / Jan.99 Hyundai Semiconductor WRITE DRIVER HY63V8400 Series ABSOLUTE MAXIMUM RATINGS(1) Symbol VIN, VOUT Vcc TA TSTG PD Parameter Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Commercial Operating Temperature Industrial Storage Temperature Power Dissipation Rating -0.5 to 4.6 -0.5 to 5.5 0 to 70 -40 to 85 -65 to 150 1.0 Unit V V °C °C °C W Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability. RECOMMENDED DC OPERATING CONDITIONS (TA=0°C to 70°C) Symbol Vcc Vss VIH VIL Parameter Supply Voltage Ground Input High Voltage I.



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