MBM29LV651UE

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-2E FLASH MEMORY CMOS 64M (4M × 16) BIT MBM29LV650UE/651UE -90/12 s DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls. The MBM29LV650UE/651UE is entirely command set compatible with JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Typically, each sector can be programmed and verified in about 0.5 seconds. (Continued) s PRODUCT LINEUP Part No. VCC = 3.3 V Ordering Part No. VCC = 3.0 V Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) +0.3 V –0.3 V +0.6 V –0.3 V MBM29LV650UE/651UE 90 — 90 90 35 — 12 120 120 50 s PACKAGES 48-pin plastic TSOP (I) Marking Side Marking Side (FPT-48P-M19) (FPT-48P-M20) MBM29LV650UE/651UE-90/12 (Continued) A sector is typically erased and verified in 1.0 second. (...