RF101L2S

RF101L2S Diodes Fast recovery Diode RF101L2S zApplications High frequency rectification zExternal dimensions (Unit : mm) zFeatures 1) Small power mold type (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss 1.5±0.2 CATHODE MARK 4.5±0.2 1.2±0.3 1 2 3 4 0.02 0.1 + −0.1 2.6±0.2 2.0±0.2 zConstruction Silicon epitaxial planar ∗ 1 , 2 ···Type No. 3 , 4 ···Manufacturing date EX. RF101L2S EX. 2003,09 → → 6,6 3,9 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current ∗ Symbol VRM VR IO IFSM Tj Tstg Limits 200 200 1.0 20 150 −55 to +150 Unit V V A A °C °C Forward peak surge current (60Hz 1cyc.) Junction temperature Storage temperature ∗ Mounting on glass epoxi board zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Typ. 0.815 10n Max. 0.870 10µ Unit V A IF=1.0A VR=200V IF=0.5A Reverse recovery time trr 12 25 nS IR=1.0A Irr=0.25 IR Conditions Note) ESD sensitive product handing required. 1/2 5.0±0.3 + RF101L2S Diodes zElectrical characteristic curves (Ta=25°C) AVERAGE RECTIFIED CURRENT : IO (A) 1000 10000 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 D=1/2 Sin(θ=180) DC IO 0A 0V VR t FORWARD CURRENT : IF (mA) REVERSE CURRENT : IR (nA) 125°C 1000 75°C T 100 D=t / T VR=200V Tj=150°C 100 125°C 10 25°C 10 75°C 25°C −25°C 1 −25°C 1 0 0.2 0.4 0.6 0.8 1 0.1 0 50 100 150 200 FORWA...