RN6001

RN6001 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN6001 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Small flat package l PC = 1~2W (mounted on ceramic substrate) l Complementary to RN5001 Unit: mm Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 0.05g (typ.) ― SC-62 2-5K1A Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC PC * Tj Tstg Rating −30 −30 −5 −2 −0.4 500 1000 150 −55~150 Unit V V V A A mW mW °C °C Marking * : Mounterd on ceramic substrate (250mm2 × 0.8t) 1 2001-10-29 RN6001 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-offcurrent Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Resistor Symbol ICBO IEBO V(BR)CES hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob R Test Circuit ― ― ― ― ― ― ― ― ― Test Condition VCB = −30V, IE = 0 VEB = −5V, IC = 0 IC = −10mA VCE = −2V, IC = −0.5A VCE = −2V, IC = −2.0A IC = −1A, IB = −0.05A IC = −1A, IB = −0.05A VCE = −2V, IC = −0.5A VCB = −10V, IE = 0, f = 1 MHz ― M...