2SC536

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC536 FEATURES Power dissipation PCM: 400 mW (Tamb=25℃) 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TRANSISTOR (NPN) TO-92 Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob unless otherwise specified) Test conditions MIN 40 30 5 1 1 60 960 0.5 100 3.5 V MHz pF TYP MAX UNIT Ic=100µA, IE=0 Ic=1mA, IB=0 IE=100µA, IC=0 VCB=35V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=6V, f=1MHz V V V µA µA CLASSIFICATION OF hFE Rank Range D 60-120 E 100-200 F 160-320 G 280-560 H 480-960 ...