DatasheetsPDF.com

Encapsulate Transistors. 2SC536 Datasheet

DatasheetsPDF.com

Encapsulate Transistors. 2SC536 Datasheet






2SC536 Transistors. Datasheet pdf. Equivalent




2SC536 Transistors. Datasheet pdf. Equivalent





Part

2SC536

Description

TO-92 Plastic Encapsulate Transistors



Feature


JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO., LTD TO-92 Plastic-Encapsulate T ransistors 2SC536 FEATURES Power dissip ation PCM: 400 mW (Tamb=25℃) 1. EMITT ER 2. COLLECTOR 3. BASE 1 2 3 TRANSIST OR (NPN) TO-92 Collector current ICM: 100 mA Collector-base voltage V(BR)CBO : 40 V Operating and storage junction t emperature range TJ, Tstg: -55℃ to +1 50℃ ELECTRICAL CHARACT.
Manufacture

Jiangsu Changjiang Electronics Technology

Datasheet
Download 2SC536 Datasheet


Jiangsu Changjiang Electronics Technology 2SC536

2SC536; ERISTICS (Tamb=25℃ Parameter Collector -base breakdown voltage Collector-emitt er breakdown voltage Emitter-Base break down voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage T ransition frequency Collector output ca pacitance Symbol V(BR)CBO V(BR)CEO V(BR )EBO ICBO IEBO hFE VCE(sat) fT Cob unl ess otherwise specif.


Jiangsu Changjiang Electronics Technology 2SC536

ied) Test conditions MIN 40 30 5 1 1 60 960 0.5 100 3.5 V MHz pF TYP MAX UNIT Ic=100µA, IE=0 Ic=1mA, IB=0 IE=100µA, IC=0 VCB=35V, IE=0 VEB=4V, IC=0 VCE=6V , IC=1mA IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=6V, f=1MHz V V V µA µA CLASSIF ICATION OF hFE Rank Range D 60-120 E 10 0-200 F 160-320 G 280-560 H 480-960 .


Jiangsu Changjiang Electronics Technology 2SC536

.

Part

2SC536

Description

TO-92 Plastic Encapsulate Transistors



Feature


JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO., LTD TO-92 Plastic-Encapsulate T ransistors 2SC536 FEATURES Power dissip ation PCM: 400 mW (Tamb=25℃) 1. EMITT ER 2. COLLECTOR 3. BASE 1 2 3 TRANSIST OR (NPN) TO-92 Collector current ICM: 100 mA Collector-base voltage V(BR)CBO : 40 V Operating and storage junction t emperature range TJ, Tstg: -55℃ to +1 50℃ ELECTRICAL CHARACT.
Manufacture

Jiangsu Changjiang Electronics Technology

Datasheet
Download 2SC536 Datasheet




 2SC536
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC536 TRANSISTOR (NPN)
TO-92
FEATURES
Power dissipation
PCM:
400 mW (Tamb=25)
Collector current
ICM: 100 mA
Collector-base voltage
V(BR)CBO:
40 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=35V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
IC=50mA, IB=5mA
VCE=6V, IC=1mA
VCE=6V, f=1MHz
MIN TYP MAX UNIT
40 V
30 V
5V
1 µA
1 µA
60 960
0.5 V
100 MHz
3.5 pF
CLASSIFICATION OF hFE
Rank
D
Range
60-120
E
100-200
F
160-320
G
280-560
H
480-960











Recommended third-party 2SC536 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)