SSD2009A

Dual N-CHANNEL POWER MOSFET FEATURES ! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1 ,G2 SSD2009A 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1,D2 D1,D2 ▼ Product Summary Part Number SSD2009 BVDSS 50V RDS(on) 0.13Ω ID 3.0A S1 ,S2 N -Channel MOSFET Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Current TA=70℃ Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation ( TA=25℃ ) ( TA=70℃ ) Operating and Junction Storage Temperature Range ① Value 50 3.0 2.3 10.0 ±20 2.0 1.3 - 55 to +150 W ℃ A V Units V A Thermal Resistance Symbol RθJA Characteristic Junction-to-Ambient Typ. -Max. 62.5 Units ℃/W ▼ ▼ ▼ Rev. A1 SSD2009A Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol BVDSS VGS(th) IGSS IDSS IDON RDS(on) gfs td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current On-State Drain-Source Current Static Drain-Source On-State Resistance Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Charge ② ② Min. Typ. Max. Units 50 1.0 ----10 --------3.0 100 -100 2.0 25 -V V nA nA μA A Ω S Dual ...