Dual N-CHANNEL POWER MOSFET
Dual N-CHANNEL POWER MOSFET
FEATURES
! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input ...
Description
Dual N-CHANNEL POWER MOSFET
FEATURES
! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability
G1 ,G2
SSD2009A
8 SOIC
S1 G1 S2 G2
1 2 3 4 8 7 6 5
D1 D1 D2 D2
Top View
D1,D2
D1,D2
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Product Summary
Part Number SSD2009 BVDSS 50V RDS(on) 0.13Ω ID 3.0A
S1 ,S2
N -Channel MOSFET
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Current TA=70℃ Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation ( TA=25℃ ) ( TA=70℃ ) Operating and Junction Storage Temperature Range ① Value 50 3.0 2.3 10.0 ±20 2.0 1.3 - 55 to +150 W ℃ A V Units V A
Thermal Resistance
Symbol RθJA Characteristic Junction-to-Ambient Typ. -Max. 62.5 Units ℃/W
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Rev. A1
SSD2009A
Electrical Characteristics (TC=25℃ unless otherwise specified)
Symbol BVDSS VGS(th) IGSS IDSS IDON RDS(on) gfs td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current On-State Drain-Source Current Static Drain-Source On-State Resistance Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Charge ② ② Min. Typ. Max. Units 50 1.0 ----10 --------3.0 100 -100 2.0 25 -V V nA nA μA A Ω S
Dual ...
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