Dual N-CHANNEL POWER MOSFET
Dual N-CHANNEL POWER MOSFET
FEATURES
! Extremely Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! ...
Description
Dual N-CHANNEL POWER MOSFET
FEATURES
! Extremely Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Rugged Polysilicon Gate Cell Structure ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability
G1 ,G2
SSD2007A
8 SOP
S1 G1 S2 G2
1 2 3 4 8 7 6 5
D1 D1 D2 D2
Top View
D1,D2
D1,D2
▼ ▼ S1 ,S2
N-Channel MOSFET
Absolute Maximum Ratings
Symbol VDSS VDGR VGS ID ID IDM PD TJ , TSTG TL
Notes ; (1) TJ= 25℃ to 150℃ (2) Repetitive Rating : Pulse Width Limited by Max. Junction Temperature
Characteristic Drain-to-Source Voltage(1) Drain-Gate Voltage(RGS=1.0MΩ)(1) Gate-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Current TA=100℃ Drain Current-Pulsed (2) Total Power Dissipation TA=25℃ TA=70℃ Operating and Storage Junction Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/16” from case for 5 seconds
Value 50 50 ±20 2.0 1.6 8.0 2.0 1.3 - 55 to +150
300
▼
! Surface Mounding Package : 8SOP
▼
Units V V V A A V W
℃
Rev. A
SSD2007A
Electrical Characteristics (TA=25℃ unless otherwise specified)
Symbol BVDSS VGS(th) IGSS IDSS IDON RDS(on) gfs td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current On-State Drain-Source Current(2) Static Drain-Source On-State Resistance(2) Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Tot...
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