BD183

BD181 – BD182 – BD183 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS BD181, BD182 and BD183 are silicon NPN transistors intended for a wide variety of high power applications. Typical applications include power switching circuits, audio amplifiers, solenoid drivers, and series and shunt regulators. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VCER VCEX VEBO IC IB PT Ratings Collector-Base Voltage Collector-EmitterVoltage Collector-EmitterVoltage RBE=100 Ω Collector-EmitterVoltage Emitter-Base Voltage Collector Current Base Current Power Dissipation VBE=-1.5 V @ TC < 25° BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 COMSET SEMICONDUCTORS Value 55 70 85 45 60 80 55 70 85 55 70 85 7.0 15 7.0 150 Unit V V V V V A A Watts 1/3 BD181 – BD182 – BD183 Symbol Ratings PTOT TJ Ts Power dissipation Junction Storage Temperature THERMAL CHARACTERISTICS Symbol Ratings RthJ-C Thermal Resistance, Junction to Case BD181 BD182 BD183 BD181 BD182 BD183 Value 117 Unit W 200 -65 to +200 °C Value 1.5 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit IEBO ICBO VCEO(BR) VCE(SAT) VBR(CER) Emitter-Base Cutoff Current VEB= 7 V, IC=0 Collector-Base Cutoff Current Collector-Emitter Breakdown Voltage (*) VCB=45 V tj=200°C VCB=60 V tj=200°C VCB=80 V tj=200°C IC=200 mA, IB=0 Collector-Emitter s...