alloyed construction. 1N4001G Datasheet

1N4001G construction. Datasheet pdf. Equivalent

Part 1N4001G
Description (1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
Feature DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N4001G to 1N4007G Rectifiers Produ.
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1N4001G
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
1N4001G to 1N4007G
Rectifiers
Product specification
Supersedes data of April 1992
1996 May 24



1N4001G
Philips Semiconductors
Rectifiers
Product specification
1N4001G to 1N4007G
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Available in ammo-pack.
DESCRIPTION
This package is hermetically sealed
and fatigue free as coefficients of
Rugged glass package, using a high expansion of all used parts are
temperature alloyed construction.
matched.
2/3 pagek(Datasheet)
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VRRM
VR
IF(AV)
IF
IFRM
IFSM
Tstg
Tj
repetitive peak reverse voltage
1N4001G
1N4002G
1N4003G
1N4004G
1N4005G
1N4006G
1N4007G
continuous reverse voltage
1N4001G
1N4002G
1N4003G
1N4004G
1N4005G
1N4006G
1N4007G
average forward current
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
averaged over any 20 ms
period; Tamb = 75 °C; see Fig.2
averaged over any 20 ms
period; Tamb = 100 °C; see Fig.2
Tamb = 75 °C; see Fig.2
half sinewave; 60 Hz
MIN. MAX. UNIT
50 V
100 V
200 V
400 V
600 V
800 V
1000 V
50 V
100 V
200 V
400 V
600 V
800 V
1000 V
1.00 A
0.75 A
1.00 A
10 A
30 A
65 +175 °C
65 +175 °C
1996 May 24
2





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