1N4005G

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N4001G to 1N4007G Rectifiers Product specification Supersedes data of April 1992 1996 May 24 Philips Semiconductors Product specification Rectifiers FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Available in ammo-pack. DESCRIPTION 1N4001G to 1N4007G This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Rugged glass package, using a high temperature alloyed construction. 2/3 page k (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G VR continuous reverse voltage 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G IF(AV) average forward current PARAMETER repetitive peak reverse voltage  a MAM047 Fig.1 Simplified outline (SOD57) and symbol. CONDITIONS MIN. − − − − − − − − − − − − − − MAX. 50 100 200 400 600 800 1000 50 100 200 400 600 800 1000 V V V V V V V V V V V V V V UNIT averaged over any 20 ms period; Tamb = 75 °C; see Fig.2 averaged over any 20 ms period; Tamb = 100 °C; see Fig.2 − − − − − −65 −65 1.00 A 0.75 A 1.00 A 10 30 +175 +175 A A °C °C IF IFRM IFSM Tstg Tj continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature Tamb = 75 °C; see Fig.2 half sinewave; 60 Hz 1996 May 24 ...