REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA)
Product Summary
Part Number
BVDSS
IRFAG...
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®
TRANSISTORS THRU-HOLE (TO-204AA)
Product Summary
Part Number
BVDSS
IRFAG50
1000V
RDS(on) 2.0
ID 5.6A
PD- 90582A
IRFAG50
1000V, N-CHANNEL
Description
HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET
transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET
transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
TO-3 (TO-204AA)
Features
Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements
Absolute Maximum Ratings
Symbol
Parameter
ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM @TC = 25°C
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery
TJ
Operating Junction and
TSTG
Storage Temperature Range
Lead Temperature
Weight
Value 5.6...