GFB50N03

GFB50N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 13mΩ ID 50A D TO-263AB 0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min. D G 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) S 0.42 (10.66) 0.320 (8.13) 0.360 (9.14) G PIN D S 0.575 (14.60) 0.625 (15.88) 0.055 (1.39) 0.066 (1.68) Dimensions in inches and (millimeters) 0.63 (17.02) 0.33 (8.38) Seating Plate -T0.096 (2.43) 0.102 (2.59) 0.027 (0.686) 0.037 (0.940) 0.120 (3.05) 0.155 (3.94) 0.014 (0.35) 0.020 (0.51) 0.100 (2.54) 0.130 (3.30) 0.08 (2.032) 0.24 (6.096) 0.12 (3.05) Mounting Pad Layout Mechanical Data Case: JEDEC TO-263 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 1.3g Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Low Voltage DC/DC Converters Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 100°C Symbol VDS VGS ID IDM PD TJ, Tstg TL RθJC (2) C = 25°C unless otherwise noted) Limit 30 Unit V ± 20 50 100 62.5 25 –55 to 150 275 2.0 40 A W °C °C °C/W °C/W 5/1/01 Operating Junction and Storage Temperature Range Lead Temperature (1/8” from case for 5 sec.) Junction-to-Case Thermal Resistance Junction-to-Ambient T...