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M464S1724DTS

Samsung semiconductor

16Mx64 SDRAM SODIMM based on 8Mx16 / 4Banks /4K Refresh / 3.3V Synchronous DRAMs with SPD

M464S1724DTS M464S1724DTS SDRAM SODIMM PC133/PC100 SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Sy...


Samsung semiconductor

M464S1724DTS

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Description
M464S1724DTS M464S1724DTS SDRAM SODIMM PC133/PC100 SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M464S1724DTS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S1724DTS consists of eight CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass-epoxy substrate. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M464S1724DTS is a Small Outline Dual In-line Memory Module and is intended for mounting into 144-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications. FEATURE Performance range Part No. M464S1724DTS-L7C/C7C M464S1724DTS-L7A/C7A M464S1724DTS-L1H/C1H M464S1724DTS-L1L/C1L Max Freq. (Speed) 133MHz (7.5ns @ CL=2) 133MHz (7.5ns @ CL=3) 100MHz (10ns @ CL=2) 100MHz (10ns @ CL=3) Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Int...




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