M464S1654ETS

128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.5 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 May 2004 128MB, 256MB, 512MB Unbuffered SODIMM Revision History Revision 1.1 (Sepember, 2003) - Corrected typo. Revision 1.2 (February, 2004) - Corrected typo. Revision 1.3 (March. 2004) - Corrected package dimension. Revision 1.4 (March. 2004) - Modified DC Characteristics Notes. Revision 1.5 (May. 2004) - Added Note 5. sentense of tRDL parameter SDRAM Rev. 1.5 May 2004 128MB, 256MB, 512MB Unbuffered SODIMM 144Pin Unbuffered SODIMM based on 256Mb E-die(x8, x16) Ordering Information Part Number M464S1654ETS-C(L)7A M464S3254ETS-C(L)7A M464S6453EN0-C(L)7A Density 128MB 256MB 512MB Organization 16M x 64 32M x 64 64M x 64 Component Composition 16Mx16(K4S561632E) * 4EA 16Mx16(K4S561632E) * 8EA 32Mx 8 (K4S560832E)*16EA Component Package 54-TSOP(II) 54-sTSOP(II) SDRAM Height 1,000mil 1,250mil 1,250mil Operating Frequencies 7A @CL3 Maximum Clock Frequency CL-tRCD-tRP(clock) 133MHz(7.5ns) 3-3-3 @CL2 100MHz(10ns) 2-2-2 Feature Burst mode operation Auto & self refresh capability (8192 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) A...