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IRFU214 Dataheets PDF



Part Number IRFU214
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel Power MOSFETs
Datasheet IRFU214 DatasheetIRFU214 Datasheet (PDF)

IRFR214, IRFU214 Data Sheet July 1999 File Number 3274.2 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are advanced power MOSFETs are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for highpower bipolar switching tr.

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IRFR214, IRFU214 Data Sheet July 1999 File Number 3274.2 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are advanced power MOSFETs are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for highpower bipolar switching transistors requiring high speed and low gate-drive power. These transistors can be operated directly from integrated circuits. Formerly developmental type TA17443. Features • 2.2A, 250V • rDS(ON) = 2.000Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • High Input Impedance • 150oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFR214 IRFU214 PACKAGE TO-252AA TO-251AA BRAND IRFR214 IRFU214 Symbol D G NOTE: When ordering, use the entire part number. S Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC TO-252AA DRAIN (FLANGE) 4-383 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFR214, IRFU214 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFR214, IRFU214 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Eas Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 250 250 2.2 1.4 8.8 ±20 25 0.20 61 -55 to 150 300 260 U.


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