IRFU220N

SMPS MOSFET PD- 95063A IRFR220NPbF IRFU220NPbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS(on) max (mΩ) ID 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current D-Pak IRFR22ON I-Pak IRFU220N Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 5.0 3.5 20 43 0.71 ± 20 7.5 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input Forward Converters Notes  through … are on page 10 www.irf.com 1 12/10/04 IRFR/U220NPbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) VGS(th) Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 200 ––– ––– ––– 0.23 ––– ––– ––– 600 2.0 ––– 4.0 V V/°C mΩ V VGS = 0V, ID = 250µA Refere...