IRFR2605

Previous Datasheet Index Next Data Sheet PD - 9.1253 IRFR2605 IRFU2605 HEXFET® Power MOSFET Ultra Low On-Resistance ESD Protected Surface Mount (IRFR2605) Straight Lead (IRFU2605) 150°C Operating Temperature Repetitive Avalanche Rated Fast Switching Description D VDSS = 55V G RDS(on) = 0.075Ω ID = 19A S Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These benefits, combined with the ruggedized device design that HEXFETs are known for, provide the designer with extremely efficient and reliable device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-PAK TO-252AA I-PAK TO-251AA Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 25°C Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)** Linear Derating Factor Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Stora...