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IRL2203NL Dataheets PDF



Part Number IRL2203NL
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRL2203NL DatasheetIRL2203NL Datasheet (PDF)

PD - 94394A IRL2203NS IRL2203NL l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G l 100% RG Tested Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known.

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PD - 94394A IRL2203NS IRL2203NL l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G l 100% RG Tested Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 7.0mΩ ID = 116A‡ S The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2203NL) is available for low-profile applications. D2Pak IRL2203NS TO-262 IRL2203NL Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ™ ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TA = 25°C Power Dissipation PD @TC = 25°C Power Dissipation VGS IAR EAR dv/dt Linear Derating Factor Ù Gate-to-Source Voltage Avalanche Current ™ Repetitive Avalanche Energy e Peak Diode Recovery dv/dt TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds i Max 116 82 400 3.8 180 1.2 ± 16 60 18 5.0 -55 to + 175 300 (1.6mm from case) Units A W W W/°C V A mJ V/ns °C Thermal Resistance Symbol RθJC RθJA k Parameter Junction-to-Case jk Junction-to-Ambient (PCB mount, steady state) Typ ––– ––– www.irf.com Max 0.85 40 Units °C/W 1 11/12/03 IRL2203NS/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) gfs IDSS Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge RG Gate Resistance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Min Typ Max Units Conditions 30 ––– ––– V VGS = 0V, ID = 250µA ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 7.0 f VGS = 10V, ID = 60A ––– ––– 10 f VGS = 4.5V, ID = 48A 1.0 ––– 3.0 73 ––– ––– V VDS = VGS, ID = 250µA f S VDS = 25V, ID = 60A ––– ––– 25 VDS = 30V, VGS = 0V µA ––– ––– 250 VDS = 24V, VGS = 0V, TJ = 125°C ––– ––– 100 nA VGS = 16V ––– ––– -100 VGS = -16V ––– ––– 60 ID = 60A ––– ––– 14 nC VDS = 24V ––– ––– 33 VGS = 4.5V, See Fig. 6 and 13 0.2 ––– 3.0 Ω ––– 11 ––– VDD = 15V ––– 160 ––– ID = 60A ––– 23 ––– ––– 66 ––– RG = 1.8Ω f VGS = 4.5V, See Fig. 10 LD Internal Drain Inductance LS Internal Source Inductance ––– 4.5 ––– Between lead, Nh 6mm (0.25in.) ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 3290 ––– VGS = 0V Coss Output Capacitance ––– 1270 ––– pF VDS = 25V Crss EAS Reverse Transfer Capacitance d Single Pulse Avalanche Energy ––– 170 ––– ƒ = 1.0MHz, See Fig. 5 g h ––– 1320 290 mJ IAS = 60A, L = 0.16mH Source-Drain Ratings and Characteristics Symbol Parameter Min Typ Max Units Conditions IS Continuous Source Current (Body Diode) ISM Pulsed Source Current Ù (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time i ––– ––– 116 MOSFET symbol A showing the ––– ––– 400 ––– ––– 1.2 integral reverse p-n junction diode. f V TJ = 25°C, IS = 60A, VGS = 0V ––– ––– 56 110 84 170 f ns TJ = 25°C, IF = 60A nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L = 0.16mH RG = 25Ω, IAS = 60A, VGS=10V (See Figure 12) ƒ ISD ≤ 60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 … This is a typical value at device destruction and represents operation outside rated limits. † This is a calculated value limited to TJ = 175°C . ‡ Calculated contin.


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