Document
PD - 94394A
IRL2203NS IRL2203NL
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
l 100% RG Tested
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET
D
VDSS = 30V RDS(on) = 7.0mΩ
ID = 116A
S
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2203NL) is available for low-profile applications.
D2Pak IRL2203NS
TO-262 IRL2203NL
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TA = 25°C Power Dissipation
PD @TC = 25°C Power Dissipation
VGS IAR EAR
dv/dt
Linear Derating Factor
à Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy e Peak Diode Recovery dv/dt
TJ TSTG
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
i Max
116 82 400 3.8 180 1.2 ± 16 60 18 5.0
-55 to + 175
300 (1.6mm from case)
Units
A
W W W/°C V A mJ V/ns
°C
Thermal Resistance
Symbol RθJC RθJA
k Parameter
Junction-to-Case
jk Junction-to-Ambient (PCB mount, steady state)
Typ ––– –––
www.irf.com
Max 0.85 40
Units °C/W
1 11/12/03
IRL2203NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol V(BR)DSS ∆V(BR)DSS/∆TJ
RDS(on)
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
VGS(th) gfs IDSS
Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Min Typ Max Units
Conditions
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 7.0
f VGS = 10V, ID = 60A
––– ––– 10
f VGS = 4.5V, ID = 48A
1.0 ––– 3.0 73 ––– –––
V VDS = VGS, ID = 250µA
f S VDS = 25V, ID = 60A
––– ––– 25
VDS = 30V, VGS = 0V
µA
––– ––– 250
VDS = 24V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– ––– 60
ID = 60A
––– ––– 14 nC VDS = 24V
––– ––– 33
VGS = 4.5V, See Fig. 6 and 13
0.2 ––– 3.0 Ω
––– 11 –––
VDD = 15V
––– 160 –––
ID = 60A
––– 23 ––– ––– 66 –––
RG = 1.8Ω
f VGS = 4.5V, See Fig. 10
LD
Internal Drain Inductance
LS
Internal Source Inductance
––– 4.5 –––
Between lead,
Nh 6mm (0.25in.)
––– 7.5 –––
from package
and center of die contact
Ciss
Input Capacitance
––– 3290 –––
VGS = 0V
Coss
Output Capacitance
––– 1270 ––– pF VDS = 25V
Crss EAS
Reverse Transfer Capacitance
d Single Pulse Avalanche Energy
––– 170 –––
ƒ = 1.0MHz, See Fig. 5
g h ––– 1320 290
mJ IAS = 60A, L = 0.16mH
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min Typ Max Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
à (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
i ––– ––– 116
MOSFET symbol
A showing the
––– ––– 400 ––– ––– 1.2
integral reverse p-n junction diode.
f V TJ = 25°C, IS = 60A, VGS = 0V
––– –––
56 110
84 170
f ns TJ = 25°C, IF = 60A
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 0.16mH RG = 25Ω,
IAS = 60A, VGS=10V (See Figure 12) ISD ≤ 60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
This is a typical value at device destruction and represents operation outside rated limits.
This is a calculated value limited to TJ = 175°C . Calculated contin.