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VSC7710 Dataheets PDF



Part Number VSC7710
Manufacturers Vitesse
Logo Vitesse
Description Photodetector Transimpedance Amplifier Family for Optical Communication
Datasheet VSC7710 DatasheetVSC7710 Datasheet (PDF)

VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7710 Features • Integrated Photodetector/Transimpedance Amplifier Family Optimized for High Speed Optical Communications Applications • Integrated AGC • Fibre Channel and Gigabit Ethernet Photodetector/Transimpedance Amplifier Family for Optical Communication • High Bandwidth • Low Input Noise Equivalent Power • Single 5V Supply Part Number VSC7710 Data Rate (Gb/s) 1.25 Bandwidth (MHz) 1300 Input Noise (µW rms) .22 Optical.

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VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7710 Features • Integrated Photodetector/Transimpedance Amplifier Family Optimized for High Speed Optical Communications Applications • Integrated AGC • Fibre Channel and Gigabit Ethernet Photodetector/Transimpedance Amplifier Family for Optical Communication • High Bandwidth • Low Input Noise Equivalent Power • Single 5V Supply Part Number VSC7710 Data Rate (Gb/s) 1.25 Bandwidth (MHz) 1300 Input Noise (µW rms) .22 Optically Active Area (µm diameter) 75 General Description The VSC7710 integrated PIN Photodetector/Transimpedance Amplifiers provides a highly integrated solution for converting 1300 nm light from a fiber optic communications channel into a differential output voltage. The benefits of Vitesse Semiconductor’s Gallium Arsenide H-GaAs-III process are fully utilized to provide a very high bandwidth and low noise amplifier. The PIN detector is 75µm in diameter. The detector bias is supplied internally eliminating the need for a separate bias connection. The sensitivity, duty cycle distortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. Parts are available in flatwindowed or lensed packages. The use of a photodetector and transimpedance amplifier hybrid, reduces the input capacitance, resulting in higher sensitivity and bandwidth and improved speed of response. These parts can easily be used in developing Fibre Channel and Gigabit Ethernet electro-optic Receivers for the 900-1600 nm spectral range which exhibit very high performance and ease of use. VSC7710 Block Diagram +5V + _ D0 D1 G52139-0, Rev 2.2 04/02/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 1 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Table 1: Electro-Optic Specifications Symbol VDD λ fc Tr Tf S Dr Ro Vd PSRR Is BW Rd Vn NEPO PDJ DCD ýV Wavelength Low Frequency Cutoff Rise/Fall Time Sensitivity Dynamic Range Single Ended Output Impedance Differential Output Voltage Power Supply Rejection Ratio Supply Current Optical Modulation Bandwidth Differential Responsivity Output Noise Voltage Input Noise Equivalent Optical Power Pattern Dependent Jitter Duty Cycle Distortion Bias Offset Voltage 700 2.5 -28 25 25 0.25 35 62 90 Advance Product Information VSC7710 Min 4.5 1270 Parameter Supply Voltage Typ Max 5.5 1355 1.4 300 Units V nm MHz ps dBm dB ¾ V dB mA MHz mV/µW Conditions -3dB P = -22dBm, fr = 50MHz 20% to 80% P = -3 dBm BER 10-12 B = 1063Mb/s 1.2 P = -3 dBm, R = 100Ω f = 0.3MHz - 40MHz Hybrid Differential P = -28 to -3 dBm -3dB P = -22dBm, fr = 50MHz ΡΛ = 100Ω P = -22dBm fr = 50MHz BW = 1500MHz, P = 0mW BW = 1500MHz, P = 0mW P = -3dBm ±10% Voltage Window P = -3dBm P = -3dBm 1300 1.2 0.22 60 5 200 mVRMS µW RMS ps % mV Page 2 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52139-0, Rev 2.2 04/02/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7710 Photodetector/Transimpedance Amplifier Family for Optical Communication Figure 1: Amplitude vs. Frequency Frequency response of VSC7710WB (Upper 3db frequency is measured with respect to response at 50 MHz) Table 2: Absolute Maximum Ratings Symbol VDD Tstg Pinc Power Supply Storage Temperature Incident Optical Power Parameter 6V Limits -55°C to 125°C (case temperature under bias) +3 dBm Table 3: Recommended Operating Conditions Symbol VDD Top Power Supply Operating Temperature Parameter 4.5-5.5V (5.0V nominal) Limits 0°C (ambient) to 70°C case G52139-0, Rev 2.2 04/02/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 3 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Advance Product Information VSC7710 Description Data output normal (with reference to incident light) Data output complement (inverting) (with reference to incident light) Power supply Ground (package case) Table 4: Pin Table Specifications for TO-46(ball lens), TO-56 (flat window) Packages and Bare Die Symbol D OUT D–OUT VDD GND + Note: Pin Diagram is identical for both TO-46 and TO-56 package styles. Figure 2: Pin Diagram VDD D+OUT D–OUT GND Figure 3: Schematic View of Bare Die Pad Assignments ANODE D–OUT GND GND CATHODE VDD D+OUT ANODE VDD Page 4 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52139-0, Rev 2.2 04/02/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7710 Thermal Resistance Calculatio.


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