VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7710
Features
• Integrated Photodetector/Transimpedance Amplifier Family Optimized for High Speed Optical Communications Applications • Integrated AGC • Fibre Channel and Gigabit Ethernet
Photodetector/Transimpedance Amplifier Family for Optical Communication
• High Bandwidth • Low Input Noise Equivalent Power • Single 5V Supply
Part Number
VSC7710
Data Rate (Gb/s)
1.25
Bandwidth (MHz)
1300
Input Noise (µW rms)
.22
Optically Active Area (µm diameter)
75
General Description
The VSC7710 integrated PIN Photodetector/Transimpedance Amplifiers provides a highly integrated solution for converting 1300 nm light from a fiber optic communications channel into a differential output voltage. The benefits of Vitesse Semiconductor’s Gallium Arsenide H-GaAs-III process are fully utilized to provide a very high bandwidth and low noise amplifier. The PIN detector is 75µm in diameter. The detector bias is supplied internally eliminating the need for a separate bias connection. The sensitivity, duty cycle distortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. Parts are available in flatwindowed or lensed packages. The use of a photodetector and transimpedance amplifier hybrid, reduces the input capacitance, resulting in higher sensitivity and bandwidth and improved speed of response. These parts can easily be used in developing Fibre Channel and Gigabit Ethernet electro-optic Receivers for the 900-1600 nm spectral range which exhibit very high performance and ease of use.
VSC7710 Block Diagram
+5V + _ D0
D1
G52139-0, Rev 2.2 04/02/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email:
[email protected] Internet: www.vitesse.com
Page 1
VITESSE
SEMICONDUCTOR CORPORATION
Photodetector/Transimpedance Amplifier Family for Optical Communication
Table 1: Electro-Optic Specifications Symbol
VDD λ fc Tr Tf S Dr Ro Vd PSRR Is BW Rd Vn NEPO PDJ DCD ýV Wavelength Low Frequency Cutoff Rise/Fall Time Sensitivity Dynamic Range Single Ended Output Impedance Differential Output Voltage Power Supply Rejection Ratio Supply Current Optical Modulation Bandwidth Differential Responsivity Output Noise Voltage Input Noise Equivalent Optical Power Pattern Dependent Jitter Duty Cycle Distortion Bias Offset Voltage 700 2.5 -28 25 25 0.25 35 62 90
Advance Product Information
VSC7710
Min
4.5 1270
Parameter
Supply Voltage
Typ
Max
5.5 1355 1.4 300
Units
V nm MHz ps dBm dB ¾ V dB mA MHz mV/µW
Conditions
-3dB P = -22dBm, fr = 50MHz 20% to 80% P = -3 dBm BER 10-12 B = 1063Mb/s
1.2
P = -3 dBm, R = 100Ω f = 0.3MHz - 40MHz Hybrid Differential P = -28 to -3 dBm -3dB P = -22dBm, fr = 50MHz ΡΛ = 100Ω P = -22dBm fr = 50MHz BW = 1500MHz, P = 0mW BW = 1500MHz, P = 0mW P = -3dBm ±10% Voltage Window P = -3dBm P = -3dBm
1300
1.2 0.22 60 5 200
mVRMS µW RMS ps % mV
Page 2
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email:
[email protected] Internet: www.vitesse.com
G52139-0, Rev 2.2 04/02/01
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7710
Photodetector/Transimpedance Amplifier Family for Optical Communication
Figure 1: Amplitude vs. Frequency
Frequency response of VSC7710WB (Upper 3db frequency is measured with respect to response at 50 MHz)
Table 2: Absolute Maximum Ratings Symbol
VDD Tstg Pinc Power Supply Storage Temperature Incident Optical Power
Parameter
6V
Limits
-55°C to 125°C (case temperature under bias) +3 dBm
Table 3: Recommended Operating Conditions Symbol
VDD Top Power Supply Operating Temperature
Parameter
4.5-5.5V (5.0V nominal)
Limits
0°C (ambient) to 70°C case
G52139-0, Rev 2.2 04/02/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email:
[email protected] Internet: www.vitesse.com
Page 3
VITESSE
SEMICONDUCTOR CORPORATION
Photodetector/Transimpedance Amplifier Family for Optical Communication
Advance Product Information
VSC7710
Description
Data output normal (with reference to incident light) Data output complement (inverting) (with reference to incident light) Power supply Ground (package case)
Table 4: Pin Table Specifications for TO-46(ball lens), TO-56 (flat window) Packages and Bare Die Symbol
D OUT D–OUT VDD GND
+
Note: Pin Diagram is identical for both TO-46 and TO-56 package styles.
Figure 2: Pin Diagram
VDD
D+OUT
D–OUT
GND
Figure 3: Schematic View of Bare Die Pad Assignments
ANODE D–OUT GND GND CATHODE
VDD D+OUT ANODE
VDD
Page 4
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email:
[email protected] Internet: www.vitesse.com
G52139-0, Rev 2.2 04/02/01
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7710
Thermal Resistance Calculatio.