Power Transistor
PROCESS
CP576
Central
TM
PNP - Amp/Switch Transistor Chip
Semiconductor Corp.
PROCESS DETAILS Pr...
Power
Transistor
PROCESS
CP576
Central
TM
PNP - Amp/Switch
Transistor Chip
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 240 PRINCIPAL DEVICE TYPES MJ15004 MULTI EPITAXIAL PLANAR 203 x 227 MILS 12.5 ± 1.0 MILS 38 x 76 MILS 47 x 72 MILS Al - 50,000Å Ag - 10,000Å
BACKSIDE COLLECTOR
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R2 (1-August 2002)
Central
TM
PROCESS
CP576
Semiconductor Corp.
Typical Electrical Characteristics
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R2 (1-August 2002)
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