JDV2S01S

JDV2S01S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01S VCO for UHF band Unit in mm High capacitance ratio: C1V/C4V = 2.0 (typ.) Low series resistance: rs = 0.5 Ω (typ.) This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C JEDEC EIAJ   1-1K1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs IR = 1 µA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz  VR = 1 V, f = 470 MHz Test Condition TOSHIBA Min 10  2.85 1.35 1.8  Typ.   3.15 1.57 2 0.5 Max  3 3.45 1.81 2.2 0.7 Unit V nA pF  Ω Note: Signal level when capacitance is measured. Vsig = 100 mVrms Marking G 000707EAA2 TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA produ...