THN6301U

THN6301U NPN Planer RF TRANSISTOR SOT-323 unit : mm ¡à DESCRIPTION The THN6301U is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequiecies It is suitable for a high density surface mount since transistor has been SOT323 package ¡à FEATURES o Low Noise Figure N.F = 1.1dB TYP. @ f=1GHz, VCE=8V, Ic=5mA o High Gain MAG = 17dB TYP. @ f=1GHz, VCE=8V, Ic=15mA o High Transition Frequency fT = 10GHz TYP. @ f=1GHz, VCE=8V, Ic=15mA PIN CONFIGURATION PIN NO 1 2 3 SYMBOL B E C DESCRIPTION Base Emitter Collector ¡à ¡à MARKING : AA1 MAXIMUM RATINGS SYMBOL VCBO VCEO VEBO Ic PT TSTG TJ PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Junction Temperature Ts = 60¡É CONDITION Open Emitter Open Base Open Collector VALUE 25 12 2.5 65 150 -65 ~ 150 ¡É ¡É 150 Unit V V V mA mW www.tachyonics.co.kr - 1/10 - Sep-2003 Rev 1.1 THN6301U ¡à Electrical Characteristics ( TA = 25 ¡É SYMBOL PARAMETER ) VALUE min typ 25 14 100 100 100 200 10 0.55 300 GHz pF max V V nA nA Unit CONDITION VCBO VCEO ICBO IEBO hfe Collector-Base Voltage ICE = 100uA, IE = 0 20 12 Collector-Emitter Voltage ICE = 100uA, IB = 0 Collector-Cut-off current Emitter-Cut-off current D.C current Gain Transition Frequency VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, Ic = 15mA VCE = 8V, Ic = 15mA fT CCB Collector-Base Capacitance VCB = 10V, f = 1MHz ¡à Performance Characteristi...