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Epitaxial Transistor. 2SD2164 Datasheet

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Epitaxial Transistor. 2SD2164 Datasheet
















2SD2164 Transistor. Datasheet pdf. Equivalent













Part

2SD2164

Description

NPN Silicon Epitaxial Transistor



Feature


DATA SHEET SILICON POWER TRANSISTOR 2S D2164 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2164 is a s ingle power transistor developed especi ally for high hFE. This transistor is i deal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington t ransistors, but it.
Manufacture

NEC

Datasheet
Download 2SD2164 Datasheet


NEC 2SD2164

2SD2164; is a single transistor. In addition, th is transistor features a small resin in sulated package, thus contributing to h igh-density mounting and mounting cost reduction. PACKAGE DRAWING (UNIT: mm) FEATURES • High hFE and low VCE(sat) : hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 0.5 A) VCE(SAT) ≅ 0.3 V TYP. (IC = 2 .0 A, IB = 20 mA) • Full mold package that does not require an .


NEC 2SD2164

insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°C) P arameter Collector to base voltage Coll ector to emitter voltage Emitter to bas e voltage Collector current (DC) Collec tor current (pulse) Base current (DC) T otal power dissipation Total power diss ipation Junction temperature Storage te mperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT.


NEC 2SD2164

(TC = 25°C) PT (TA = 25°C) Tj Tstg Ra tings 60 60 7.0 3.0 5.0 Note (OHFWURGH &RQQHFWLRQ  %DVH Unit V V V A A A W W °C °C  &ROOHFWRU  (PLWWHU 0. 5 20 2.0 150 −55 to +150 Note PW ≤ 300 µs, duty cycle ≤ 10% The infor mation in this document is subject to c hange without notice. Before using this document, please confirm that this is the latest version. Not all .





Part

2SD2164

Description

NPN Silicon Epitaxial Transistor



Feature


DATA SHEET SILICON POWER TRANSISTOR 2S D2164 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2164 is a s ingle power transistor developed especi ally for high hFE. This transistor is i deal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington t ransistors, but it.
Manufacture

NEC

Datasheet
Download 2SD2164 Datasheet




 2SD2164
DATA SHEET
SILICON POWER TRANSISTOR
2SD2164
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2164 is a single power transistor developed especially
for high hFE. This transistor is ideal for simplifying drive circuits and
reducing power dissipation because its hFE is as high as that of
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin insulated
package, thus contributing to high-density mounting and mounting
cost reduction.
FEATURES
• High hFE and low VCE(sat):
hFE 1,300 TYP. (VCE = 5.0 V, IC = 0.5 A)
VCE(SAT) 0.3 V TYP. (IC = 2.0 A, IB = 20 mA)
• Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)
Base current (DC)
IB(DC)
Total power dissipation
PT (TC = 25°C)
Total power dissipation
PT (TA = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
Note PW 300 µs, duty cycle 10%
Ratings
60
60
7.0
3.0
5.0Note
0.5
20
2.0
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
(OHFWURGH &RQQHFWLRQ
 %DVH
 &ROOHFWRU
 (PLWWHU
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15606EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928




 2SD2164
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 60 V, IE = 0 A
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VEB = 7.0 V, IC = 0 A
VCE = 5.0 V, IC = 0.5 ANote
VCE = 5.0 V, IC = 3.0 ANote
IC = 2.0 A, IB = 20 mANote
IC = 2.0 A, IB = 20 mANote
Gain bandwidth product
fT VCE = 5.0 V, IC = 0.1 A
Collector capacitance
Cob VCB = 10 V, IE = 0 A, f = 1.0 MHz
1RWH Pulse test PW 350 µs, duty cycle 2%
hFE1 CLASSIFICATION
Marking
hFE1
M
800 to 1,600
L
1,000 to 2,000
K
1,600 to 3,200
2SD2164
MIN.
800
500
TYP.
1,300
1,000
0.3
110
50
MAX.
10
10
3,200
0.5
1.2
Unit
µA
µA
V
V
MHz
pF
2 Data Sheet D15606EJ3V0DS




 2SD2164
TYPICAL CHARACTERISTICS (TA = 25°C)
2SD2164
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Data Sheet D15606EJ3V0DS
3




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