SD4017

SD4017 RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS . . . . . . . . . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT MATCHING DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY COMMON EMITTER CONFIGURATION POUT = 30 W MIN. WITH 7.5 dB GAIN η C = 55% TYPICAL TYPICAL LOAD MISMATCH CAPABILITY: 20:1 ALL ANGLES RATED CONDITIONS 10:1 ALL ANGLES @ ± 20% RATED VOLTAGE TYPICAL OVERDRIVE SURVIVABILITY 5 dB .230 6LFL (M142) epoxy sealed ORDER CODE SD4017 BRANDING SD4017 PIN CONNECTION DESCRIPTION The SD4017 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity class AB operation for cellular base station applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter 1. Collector 2. Base 3. Emitter Value Unit VCBO VCEO VEBO PDISS IC TJ T STG Collector-Base Voltage Collector-Emitter Voltage Collector-Supply Voltage Power Dissipation Device Current Junction Temperature Storage Temperature 48 25 3.5 88 7.5 200 − 65 to +150 V V V W A °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 2.0 °C/W July 19, 1994 1/7 SD4017 ELECTRICAL SPECIFICATIONS (T case STATIC Symbol Test Conditions Value Min. Typ. Max. Unit = 25° C) BVCBO BVEBO BVCEO BVCER ICBO hFE IC = 100 mA IE = 10 mA IC = 40 mA IC = 40 mA VCE = 24 V VCE = 20 V IC = 2 A RBE = 150 Ω 48 3.5 25 30 10 15 55 5 28 40 — 40 — — — — — 100 V V V V mA — DYNAMIC Symbol Test Conditions Value Min...