Document
®
STPS1545CT/CF/CG/CFP/CR
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 2 x 7.5 A 45 V 175 °C 0.57 V
A1 K A2
FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING INSULATED PACKAGE: ISOWATT220AB, TO-220FPAB Insulating voltage = 2000V DC Capacitance = 12pF AVALANCHE CAPABILITY SPECIFIED
s s s s s
A2 A1 K
A1
A2 K
TO-220AB STPS1545CT
ISOWATT220AB STPS1545CF
K
DESCRIPTION Dual center tap Schottky rectifier suited for SwitchMode Power Supply and high frequency DC to DC converters. Packaged either in TO-220AB, ISOWATT220AB, TO-220FPAB, D2PAK or I2PAK, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.
A2 A1
A2 K A1
D2PAK STPS1545CG
TO-220FPAB STPS1545CFP
A2 A1 K
I2PAK STPS1545CR
July 2003 - Ed: 5F
1/8
STPS1545CT/CF/CG/CFP/CR
ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current δ = 0.5 TO-220AB / D PAK I2PAK ISOWATT220AB TO-220FPAB IFSM IRRM IRSM PARM Tstg Tj dV/dt * : Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage
2
Parameter Repetitive peak reverse voltage Tc = 157°C Tc = 130°C tp = 10 ms Sinusoidal tp = 2 µs square F = 1kHz tp = 100 µs square tp = 1µs Tj = 25°C Per diode Per device
Value 45 20 7.5 15 150 1 2 2700 -65 to +175 175 10000
Unit V A A
A A A W °C °C V/µs
dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a )
Parameter Junction to case TO-220AB / D2PAK / I2PAK ISOWATT220AB / TO-220FPAB Per diode Total Per diode Total Coupling Value 3.0 1.7 5.5 4.2 0.35 2.9 Unit °C/W
THERMAL RESISTANCES Symbol Rth (j-c)
Rth (c)
TO-220AB / D2PAK / I2PAK ISOWATT220AB / TO-220FPAB
When the diodes 1 and 2 are used simultaneously: ∆ Tj (diode 1) = P (diode1) x Rth(j-c) (per diode) + P (diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol IR * Parameter Reverse leakage current Tests Conditions Tj = 25°C Tj = 125°C VF * Forward voltage drop Tj = 125°C Tj = 25°C Tj = 125°C
Pulse test : * tp = 380 µs, δ < 2%
Min.
Typ.
Max. 100
Unit µA mA V
VR = VRRM 5 IF = 7.5 A IF = 15 A IF = 15 A 0.65 0.5
15 0.57 0.84 0.72
To evaluate the conduction losses use the following equation : P = 0.42 x IF(AV) + 0.020 IF2(RMS)
2/8
STPS1545CT/CF/CG/CFP/CR
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W) 6 5 4 3 2 1 IF(av) (A) 0 0 1 2 3 4 5 6 7
δ=tp/T
tp T
Fig. 2: Average current versus temperature ( δ = 0.5, per diode).
IF(av)(A)
ambient
δ = 0.1 δ = 0.05
δ = 0.2
δ = 0.5
δ=1
8
9
10
9 8 7 6 5 4 3 2 1 0
Rth(j-a)=Rth(j-c) ISOWATT220AB TO-220FPAB Rth(j-a)=15°C/W Rth(j-a)=40°C/W
TO-220AB D²PAK
T
δ=tp/T
tp
Tamb(°C) 50 75 100 125 150 175
0
25
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) PARM(1µs)
1
Fig. 4: Normalized avalanche power derating versus junction temperature.
PARM(tp) PARM(25°C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(µs)
10 100 1000
Tj(°C)
0 0 25 50 75 100 125 150
Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB and D2PAK).
IM(A) 120 100 80 60 40
IM
Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (ISOWATT220AB, TO-220FPAB).
IM(A) 80 70 60 50
Tc=50°C Tc=100°C
Tc=50°C Tc=100°C
40 30 20 10 0 1E-3
IM t
Tc=150°C
t
Tc=150°C
20 0 1E-3
δ=0.5
t(s) 1E-2 1E-1 1E+0
δ=0.5
t(s) 1E-2 1E-1 1E+0
3/8
STPS1545CT/CF/CG/CFP/CR
Fig. 6-1: Relative variation of thermal transient impedance junction to case versus pulse duration (per diode) (TO-220AB and D2PAK).
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4
δ = 0.2 δ = 0.5
Fig. 6-2: Relative variation of thermal transient impedance junction to case versus pulse duration (per diode) (ISOWATT220AB, TO-220FPAB).
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4
δ = 0.5
T
0.2
δ = 0.1
0.2
tp(s) 1E-3 1E-2
δ=tp/T
tp
δ = 0.2 δ = 0.1 Single pulse
T
Single pulse
tp(s) 1E-1
0.0 1E-4
1E-1
1E+0
0.0 1E-3
δ=tp/T
tp
1E-2
1E+0
1E+1
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode).
IR(µA) 5E+4 1E+4 1E+3 1E+2 1E+1
Tj=25°C Tj=150°C Tj=125°C Tj=100°C Tj=75°C Tj=50°C
Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode).
C(pF) 1000
F=1MHz Tj=25°C
500
200 VR(V) 1 2 5 10 20 50
1E+0 1E-1 VR(V) 0 5 10 15 20 25 30 35 40 45
100
Fig. 9: Forward voltage drop versus forward current (maximum values, per diode).
IFM(A) 100.0
Tj=125°C Typical values
Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35µm).
Rth(j-a) (°C/W) 80 70 60
10.0
Tj=25°C
50 4.