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STPS1545CFP Dataheets PDF



Part Number STPS1545CFP
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description (STPS1545CT/CF/CG/CFP/CR) POWER SCHOTTKY RECTIFIER
Datasheet STPS1545CFP DatasheetSTPS1545CFP Datasheet (PDF)

® STPS1545CT/CF/CG/CFP/CR POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 2 x 7.5 A 45 V 175 °C 0.57 V A1 K A2 FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING INSULATED PACKAGE: ISOWATT220AB, TO-220FPAB Insulating voltage = 2000V DC Capacitance = 12pF AVALANCHE CAPABILITY SPECIFIED s s s s s A2 A1 K A1 A2 K TO-220AB STPS1545CT ISOWATT220AB STPS1545CF K DESCRIPTION Dual center tap Schottky rectif.

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® STPS1545CT/CF/CG/CFP/CR POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 2 x 7.5 A 45 V 175 °C 0.57 V A1 K A2 FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING INSULATED PACKAGE: ISOWATT220AB, TO-220FPAB Insulating voltage = 2000V DC Capacitance = 12pF AVALANCHE CAPABILITY SPECIFIED s s s s s A2 A1 K A1 A2 K TO-220AB STPS1545CT ISOWATT220AB STPS1545CF K DESCRIPTION Dual center tap Schottky rectifier suited for SwitchMode Power Supply and high frequency DC to DC converters. Packaged either in TO-220AB, ISOWATT220AB, TO-220FPAB, D2PAK or I2PAK, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. A2 A1 A2 K A1 D2PAK STPS1545CG TO-220FPAB STPS1545CFP A2 A1 K I2PAK STPS1545CR July 2003 - Ed: 5F 1/8 STPS1545CT/CF/CG/CFP/CR ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current δ = 0.5 TO-220AB / D PAK I2PAK ISOWATT220AB TO-220FPAB IFSM IRRM IRSM PARM Tstg Tj dV/dt * : Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage 2 Parameter Repetitive peak reverse voltage Tc = 157°C Tc = 130°C tp = 10 ms Sinusoidal tp = 2 µs square F = 1kHz tp = 100 µs square tp = 1µs Tj = 25°C Per diode Per device Value 45 20 7.5 15 150 1 2 2700 -65 to +175 175 10000 Unit V A A A A A W °C °C V/µs dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) Parameter Junction to case TO-220AB / D2PAK / I2PAK ISOWATT220AB / TO-220FPAB Per diode Total Per diode Total Coupling Value 3.0 1.7 5.5 4.2 0.35 2.9 Unit °C/W THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) TO-220AB / D2PAK / I2PAK ISOWATT220AB / TO-220FPAB When the diodes 1 and 2 are used simultaneously: ∆ Tj (diode 1) = P (diode1) x Rth(j-c) (per diode) + P (diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol IR * Parameter Reverse leakage current Tests Conditions Tj = 25°C Tj = 125°C VF * Forward voltage drop Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% Min. Typ. Max. 100 Unit µA mA V VR = VRRM 5 IF = 7.5 A IF = 15 A IF = 15 A 0.65 0.5 15 0.57 0.84 0.72 To evaluate the conduction losses use the following equation : P = 0.42 x IF(AV) + 0.020 IF2(RMS) 2/8 STPS1545CT/CF/CG/CFP/CR Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 6 5 4 3 2 1 IF(av) (A) 0 0 1 2 3 4 5 6 7 δ=tp/T tp T Fig. 2: Average current versus temperature ( δ = 0.5, per diode). IF(av)(A) ambient δ = 0.1 δ = 0.05 δ = 0.2 δ = 0.5 δ=1 8 9 10 9 8 7 6 5 4 3 2 1 0 Rth(j-a)=Rth(j-c) ISOWATT220AB TO-220FPAB Rth(j-a)=15°C/W Rth(j-a)=40°C/W TO-220AB D²PAK T δ=tp/T tp Tamb(°C) 50 75 100 125 150 175 0 25 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1µs) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 0 25 50 75 100 125 150 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB and D2PAK). IM(A) 120 100 80 60 40 IM Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (ISOWATT220AB, TO-220FPAB). IM(A) 80 70 60 50 Tc=50°C Tc=100°C Tc=50°C Tc=100°C 40 30 20 10 0 1E-3 IM t Tc=150°C t Tc=150°C 20 0 1E-3 δ=0.5 t(s) 1E-2 1E-1 1E+0 δ=0.5 t(s) 1E-2 1E-1 1E+0 3/8 STPS1545CT/CF/CG/CFP/CR Fig. 6-1: Relative variation of thermal transient impedance junction to case versus pulse duration (per diode) (TO-220AB and D2PAK). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 δ = 0.2 δ = 0.5 Fig. 6-2: Relative variation of thermal transient impedance junction to case versus pulse duration (per diode) (ISOWATT220AB, TO-220FPAB). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 δ = 0.5 T 0.2 δ = 0.1 0.2 tp(s) 1E-3 1E-2 δ=tp/T tp δ = 0.2 δ = 0.1 Single pulse T Single pulse tp(s) 1E-1 0.0 1E-4 1E-1 1E+0 0.0 1E-3 δ=tp/T tp 1E-2 1E+0 1E+1 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(µA) 5E+4 1E+4 1E+3 1E+2 1E+1 Tj=25°C Tj=150°C Tj=125°C Tj=100°C Tj=75°C Tj=50°C Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 1000 F=1MHz Tj=25°C 500 200 VR(V) 1 2 5 10 20 50 1E+0 1E-1 VR(V) 0 5 10 15 20 25 30 35 40 45 100 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 100.0 Tj=125°C Typical values Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35µm). Rth(j-a) (°C/W) 80 70 60 10.0 Tj=25°C 50 4.


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