DatasheetsPDF.com

STPS30150CT

ST Microelectronics

High voltage power Schottky rectifier

STPS30150C High voltage power Schottky rectifier Datasheet - production data A1 K A2 K A2 K A1 TO-220AB A2 K A1 TO-...


ST Microelectronics

STPS30150CT

File Download Download STPS30150CT Datasheet


Description
STPS30150C High voltage power Schottky rectifier Datasheet - production data A1 K A2 K A2 K A1 TO-220AB A2 K A1 TO-220FPAB TO-247 A2 K A1 K K Features  High junction temperature capability  Good trade off between leakage current and forward voltage drop  Low leakage current  Avalanche capability specified  Insulated package: TO-220FPAB  Insulating voltage = 2000 VRMS sine  ECOPACK®2 compliant component for D²PAK on demand Description Dual center tap Schottky rectifier designed for high frequency switch mode power supply. Table 1: Device summary Symbol Value IF(AV) VRRM Tj (max) VF (typ) 2 x 15 A 150 V 175 °C 0.69 V A2 A1 D2PAK A2 A1 May 2017 DocID7757 Rev 9 This is information on a product in full production. 1/16 www.st.com Characteristics STPS30150C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbo l Parameter Value Unit VRRM Repetitive peak reverse voltage 150 V IF(RMS) Forward rms current 30 A TC = 120 °C Per diode 15 Average forward TO-220FPAB TC = 90 °C Per device 30 IF(AV) current δ = 0.5, A square wave TO-220AB, TC = 155 °C Per diode 15 D2PAK, TO-247 TC = 150 °C Per device 30 Surge non IFSM repetitive forward tp = 10 ms sinusoidal current 220 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 750 W Tstg Storage temperature range Tj Maximum operating junction temperature (1) -65 to +175 °C +175 °C Notes: (1)(dPtot/dTj) <...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)