DatasheetsPDF.com

T1235H Dataheets PDF



Part Number T1235H
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description 12A TRIAC
Datasheet T1235H DatasheetT1235H Datasheet (PDF)

T1235H, T1250H High temperature 12 A Snubberless™ Triacs Features ■ Medium current Triac ■ 150 °C max. Tj turn-off commutation ■ Low thermal resistance with clip bonding ■ Very high 3 quadrant commutation capability ■ Packages are RoHS (2002/95/EC) compliant ■ UL certified (ref. file E81734) Applications Especially designed to operate in high power density or universal motor applications such as vacuum cleaner and washing machine drum motor, these 12 A Triacs provide a very high switching capab.

  T1235H   T1235H



Document
T1235H, T1250H High temperature 12 A Snubberless™ Triacs Features ■ Medium current Triac ■ 150 °C max. Tj turn-off commutation ■ Low thermal resistance with clip bonding ■ Very high 3 quadrant commutation capability ■ Packages are RoHS (2002/95/EC) compliant ■ UL certified (ref. file E81734) Applications Especially designed to operate in high power density or universal motor applications such as vacuum cleaner and washing machine drum motor, these 12 A Triacs provide a very high switching capability up to junction temperatures of 150 °C. The heatsink can be reduced, compared to traditional Triacs, according to the high performance at given junction temperatures. Description Available in through-hole or surface mount packages, the T1235H and T1250H Triac series are suitable for general purpose mains power ac switching. By using an internal ceramic pad, the T12xxH-6I provides voltage insulation (rated at 2500 V rms). A2 G A2 A1 A2 A2 G A1 D2PAK T12xxH-6G G A2 A1 TO-220AB T12xxH-6T G A2 A1 TO-220AB Insulated T12xxH-6I Table 1. Device summary Symbol Value Unit IT(RMS) 12 A VDRM/VRRM 600 V IGT 35 or 50 mA TM: Snubberless is a trademark of STMicroelectronics September 2011 Doc ID 13574 Rev 2 1/10 www.st.com 10 Characteristics 1 Characteristics T1235H, T1250H Table 2. Absolute maximum ratings Symbol Parameter Value IT(RMS) On-state rms current (full sine wave) ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I²t I²t Value for fusing dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns VDSM/VRSM Non repetitive surge peak off-state voltage D2PAK, TO-220AB Tc = 130 °C 12 TO-220AB Ins Tc = 120 °C F = 50 Hz t = 20 ms 120 F = 60 Hz t = 16.7 ms 126 tp = 10 ms 95 F = 120 Hz Tj = 150 °C 50 tp = 10 ms Tj = 25 °C VDRM/VRRM + 100 IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range tp = 20 µs Tj = 150 °C Tj = 150 °C 4 1 - 40 to + 150 - 40 to + 150 Unit A A A2s A/µs V A W °C Table 3. Symbol Electrical characteristics (Tj = 25 °C, unless otherwise specified) Test conditions Quadrant Value T1235H T1250H IGT (1) VGT VGD IH (2) VD = 12 V, RL = 33 Ω VD = VDRM, RL = 3.3 kΩ IT = 500 mA IL IG = 1.2 IGT dV/dt (2) (dI/dt)c (2) VD = 67% VDRM, gate open, Tj = 150 °C Without snubber, Tj = 150 °C I - II - III I - II - III I - II - III I - III II MAX. MAX. MIN. MAX. MAX. MIN. MIN. 35 50 1.0 0.15 35 75 50 90 80 110 1000 1500 16 21 1. minimum IGT is guaranted at 20% of IGT max. 2. for both polarities of A2 referenced to A1. Unit mA V V mA mA V/µs A/ms 2/10 Doc ID 13574 Rev 2 T1235H, T1250H Characteristics Table 4. Static characteristics Symbol VT (1) Vt0 (1) Rd (1) ITM = 17 A, tp = 380 µs Threshold voltage Dynamic resistance Test conditions IDRM IRRM (2) VDRM = VRRM VD/VR = 400 V (at peak mains voltage) VD/VR = 200 V (at peak mains voltage).


T12A6CI T1235H T1235-600G


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)