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KMM372F1600BS

Samsung Semiconductor

DRAM Module

DRAM MODULE KMM372F160(8)0BK/BS KMM372F160(8)0BK/BS EDO Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh,...


Samsung Semiconductor

KMM372F1600BS

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Description
DRAM MODULE KMM372F160(8)0BK/BS KMM372F160(8)0BK/BS EDO Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION The Samsung KMM372F160(8)0B is a 16Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F160(8)0B consists of eighteen CMOS 16Mx4bits DRAMs in SOJ/TSOP-II 400mil packages and two 16 bits driver IC in TSSOP package mounted on a 168-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM372F160(8)0B is a Dual In-line Memory Module and is intended for mounting into 168 pin edge connector sockets. FEATURES Part Identification Part number KMM372F1600BK KMM372F1600BS KMM372F1680BK KMM372F1680BS PKG SOJ TSOP SOJ TSOP Ref. 4K 8K CBR Ref. ROR Ref. 4K/64ms 4K/64ms 8K/64ms PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 18ns 20ns tRC 84ns 104ns tHPC 20ns 25ns Extended Data Out Mode Operation CAS-before-RAS Refresh capability RAS-only and Hidden refresh capability LVTTL compatible inputs and outputs Single 3.3V±0.3V power supply JEDEC standard pinout & Buffered PDpin Buffered input except RAS and DQ PCB : Height(1250mil), double sided component PIN CONFIGURATIONS Pin Front Pin Front Pin Front Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 VSS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VCC DQ14 DQ15 DQ16 DQ17 VSS RSVD RSVD VCC W0 CAS0 29 *CAS2 57 30 RAS0 58 31 OE0 59 60 32 VSS 6...




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