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KMM372F3280BS1

Samsung Semiconductor

DRAM Module

DRAM MODULE KMM372F320(8)0BS1 KMM372F320(8)0BS1 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3...


Samsung Semiconductor

KMM372F3280BS1

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Description
DRAM MODULE KMM372F320(8)0BS1 KMM372F320(8)0BS1 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION The Samsung KMM372F320(8)0B1 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0B1 consists of thirty-six CMOS 16Mx4bits DRAMs in TSOP 400mil packages and two 16 bits driver IC in TSSOP package mounted on a 168-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM372F320(8)0B1 is a Dual In-line Memory Module and is intended for mounting into 168 pin edge connector sockets. FEATURES Part Identification Part number KMM372F3200BS1 KMM372F3280BS1 PKG TSOP TSOP Ref. 4K 8K CBR Ref. 4K/64ms ROR Ref. 8K/64ms 4K/64ms Extended Data Out Mode Operation CAS-before-RAS Refresh capability RAS-only and Hidden refresh capability LVTTL compatible inputs and outputs Single 3.3V±0.3V power supply JEDEC standard pinout & Buffered PDpin Buffered input except RAS and DQ PCB : Height(2100mil), double sided component PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 18ns 20ns tRC 84ns 104ns tHPC 20ns 25ns PIN CONFIGURATIONS Pin Front Pin Front Pin Front Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 VSS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VCC DQ14 DQ15 DQ16 DQ17 VSS RSVD RSVD VCC W0 CAS0 29 *CAS2 57 30 RAS0 58 31 OE0 59 60 32 VSS 61 33 A0 62 34 A2 63 35 A4 64 36 A6 65 37...




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