CP100

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 PNP SILICON PLANAR TRANSISTOR CP100 CN100 TO-237 Plastic Package CN100 And CP100 Are Medium Power Transitors Suitable For a Wide Range of Medium Voltage and Current Applications. Complementary CN100 ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL VALUE V Collector -Base Voltage 60 CBO VCEO Collector -Emitter Voltage 50 VEBO Emitter Base Voltage 7 IC Collector Current Continuous 1 PTA Power Dissipation @Ta=25ºC 800 6 Derate Above 25ºC Tj, Tstg Operating and Storage Junction -55 to +150 Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage Collector -Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Leakage Current Emitter Leakage Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter On Voltage VCEO * VCBO VEBO ICBO IEBO hFE * VCE(sat)* VBE(on) IC=10mA, IB=0 IC=100µA, IE=0 IE=100µA, IC=0 VCB=40V, IE=0 VEB=5V, IE=0 IC=150mA,VCE=1V IC=150mA,IB=15mA IC=150mA,VCE= 1V UNIT V V V A mW mW/ºC ºC VALUE MIN MAX 50 60 7 50 25 50 280 0.6 0.9 UNIT V V V nΑ nΑ V V DESCRIPTION DYNAMIC CHARACTERISTICS Transition Frequency SYMBOL TEST CONDITION MIN VALUE TYP MAX UNIT fT VCE=10V, IC=50mA, f=20MHz 80 *Pulse Condition: Pulse Width <300µs, Duty Cycle <2% CLASSIFICATION hFE A 50-120 B 100-200 Continental Devic...