2SB1706

2SB1706 Transistors Low frequency amplifier 2SB1706 zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm) Each lead has same dimensions 0.4 1.0MAX 0.85 0.7 (3) 2.8 1.6 zFeatures 1) A collector current is large. 2) VCE(sat) ≤ -370mV At lc= -1.5A / lB= -75mA 0~0.1 (1) (2) 0.95 0.95 1.9 2.9 0.16 0.3 ~0.6 ROHM : TSMT3 2SB1706 Abbreviated symbol : XY (1) Base (2) Emitter (3) Collector zAbsolute maximum ratings (Ta=25°C) Limits Symbol −30 VCBO −30 VCEO −6 VEBO −2 IC Collector current ICP −4 500 PC Power dissipation Tj 150 Junction temperature Tstg Range of storage temperature −55 to +150 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage ∗1 Single pulse, Pw=1ms ∗2 Each Terminal Mounted on a Recommended Unit V V V A A ∗1 mW ∗2 °C °C zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff curent Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −30 −30 −6 − − − 270 − − Typ. − − − − − −180 − 280 20 Max. − − − −100 −100 −370 680 − − Unit V V V nA nA mV − MHz pF Conditions IC= −10µA IC= −1mA IE= −10µA VCB= −30V VEB= −6V IC= −1.5A, IB= −75mA VCE= −2V, IC= −200mA VCE= −2V, IE=200mA, f=100MHz VCB= −10V, IE=0A, f=1MHz Rev.B 1/2 2SB1706 Transistors zPackaging specifications package...