MPSH10

MOTOROLA SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistors Order this document by MPSH10/D NPN Silicon COLLECTOR 3 1 BASE 2 EMITTER MPSH10 MPSH11 Motorola Preferred Devices MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO PD PD TJ, Tstg Value 25 30 3.0 350 2.8 1.0 8.0 – 55 to +150 Unit Vdc Vdc Vdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 2 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 3.0 — — — — — 100 100 Vdc Vdc Vdc nAdc nAdc Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPSH10 MPSH11 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (...